KT666A9 Datasheet. Specs and Replacement

Type Designator: KT666A9  📄📄 

SMD Transistor Code: КТ666А9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

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KT666A9 datasheet

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Detailed specifications: KT660A, KT660B, KT661A, KT662A, KT664A9, KT664B9, KT665A9, KT665B9, 2SC2655, KT667A9, KT668A, KT668B, KT668V, KT671A-2, KT680A, KT681A, KT682A-2

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