2N407 PDF Specs and Replacement
Type Designator: 2N407
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 6.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO40
2N407 Substitution
2N407 PDF detailed specifications
2n4070.pdf
isc Silicon NPN Power Transistor 2N4070 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2N406 , 2N4060 , 2N4061 , 2N4062 , 2N4063 , 2N4064 , 2N4068 , 2N4069 , 2N2222 , 2N4070 , 2N4071 , 2N4072 , 2N4073 , 2N4074 , 2N4075 , 2N4076 , 2N4077 .
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