2N407 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N407
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 6.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO40
2N407 Transistor Equivalent Substitute - Cross-Reference Search
2N407 Datasheet (PDF)
0.1. Size:183K inchange semiconductor
2n4070.pdf
2n4070.pdf
isc Silicon NPN Power Transistor 2N4070DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
