2N4070 Specs and Replacement
Type Designator: 2N4070
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
2N4070 Substitution
- BJT ⓘ Cross-Reference Search
2N4070 datasheet
isc Silicon NPN Power Transistor 2N4070 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2N4060, 2N4061, 2N4062, 2N4063, 2N4064, 2N4068, 2N4069, 2N407, 2N5551, 2N4071, 2N4072, 2N4073, 2N4074, 2N4075, 2N4076, 2N4077, 2N4078
Keywords - 2N4070 pdf specs
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