All Transistors. 2N4106 Datasheet

 

2N4106 Datasheet and Replacement


   Type Designator: 2N4106
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.6 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO1
 

 2N4106 Substitution

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2N4106 Datasheet (PDF)

 9.1. Size:320K  rca
 2n410.pdf pdf_icon

2N4106

 9.2. Size:10K  semelab
 2n4104.pdf pdf_icon

2N4106

2N4104Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.05A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N409 | 2SA1707T-AN | CSB856C

Keywords - 2N4106 transistor datasheet

 2N4106 cross reference
 2N4106 equivalent finder
 2N4106 lookup
 2N4106 substitution
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