2N4106 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4106
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 165 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
2N4106 Transistor Equivalent Substitute - Cross-Reference Search
2N4106 Datasheet (PDF)
9.2. Size:10K semelab
2n4104.pdf
2n4104.pdf
2N4104Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.05A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
Datasheet: 2N4087A , 2N409 , 2N4099 , 2N41 , 2N410 , 2N4100 , 2N4104 , 2N4105 , BC337 , 2N4106A , 2N411 , 2N4111 , 2N4112 , 2N4113 , 2N4114 , 2N4115 , 2N4116 .
