All Transistors. KT829V Datasheet

 

KT829V Datasheet and Replacement


   Type Designator: KT829V
   SMD Transistor Code: КТ829В
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
 

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KT829V Datasheet (PDF)

 9.1. Size:33K  no
 kt829a.pdf pdf_icon

KT829V

n-p-n, 829Ik max,A 8Uo (U max)[Ur max],B100U max,B 100P max(P max), 60T max,C 150h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3U ,B 2I(IR), 1500f(fh21), 4R -(R -),/ 2.08

 9.2. Size:713K  russia
 kt829a-b-v-g.pdf pdf_icon

KT829V

 9.3. Size:213K  inchange semiconductor
 kt829a.pdf pdf_icon

KT829V

isc Silicon NPN Darlington Power Transistor KT829ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE

Datasheet: KT827V , KT828A , KT828B , KT828G , KT828V , KT829A , KT829B , KT829G , BC639 , KT830 , KT830A , KT830G , KT830V , KT834A , KT834B , KT834V , KT835A .

Keywords - KT829V transistor datasheet

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