KT912B Specs and Replacement

Type Designator: KT912B

SMD Transistor Code: КТ912Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

 KT912B Substitution

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KT912B datasheet

 9.1. Size:706K  russia

 kt912a-b 2t912a-b.pdf pdf_icon

KT912B

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 9.2. Size:96K  syntez microelectronics

 kt9128ac.pdf pdf_icon

KT912B

Syntez Microelectronics KT9128AC SILICON BIPOLAR NPN POWER TRANSISTOR 200 W, in the 30 175 MHz Frequency Range ________________________________________________ The silicon bipolar n-p-n transistor is designed for wideband large signal output and driver amplifier stages in the 30 to 175 MHz frequency range. Features (At 175 MHz) Output Power 200 W Power Gain 7.5 dB Min ... See More ⇒

Detailed specifications: KT9121V, KT9124A, KT9124B, KT9126A, KT9127A, KT9127B, KT9129A, KT912A, B772, KT9131A, KT9133A, KT9135A-2, KT9137A, KT9139A, KT9139B, KT913A, KT913B

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