KT912B Datasheet, Equivalent, Cross Reference Search
Type Designator: KT912B
SMD Transistor Code: КТ912Б
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
KT912B Transistor Equivalent Substitute - Cross-Reference Search
KT912B Datasheet (PDF)
9.2. Size:96K syntez microelectronics
kt9128ac.pdf
kt9128ac.pdf
Syntez MicroelectronicsKT9128ACSILICON BIPOLAR NPN POWER TRANSISTOR200 W, in the 30 175 MHz Frequency Range ________________________________________________The silicon bipolar n-p-n transistor is designed forwideband largesignal output and driver amplifierstages in the 30 to 175 MHz frequency range.Features (At 175 MHz): Output Power: 200 W Power Gain: 7.5 dB Min
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
