All Transistors. KT912B Datasheet

 

KT912B Datasheet and Replacement


   Type Designator: KT912B
   SMD Transistor Code: КТ912Б
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
 

 KT912B Substitution

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KT912B Datasheet (PDF)

 9.1. Size:706K  russia
 kt912a-b 2t912a-b.pdf pdf_icon

KT912B

 9.2. Size:96K  syntez microelectronics
 kt9128ac.pdf pdf_icon

KT912B

Syntez MicroelectronicsKT9128ACSILICON BIPOLAR NPN POWER TRANSISTOR200 W, in the 30 175 MHz Frequency Range ________________________________________________The silicon bipolar n-p-n transistor is designed forwideband largesignal output and driver amplifierstages in the 30 to 175 MHz frequency range.Features (At 175 MHz): Output Power: 200 W Power Gain: 7.5 dB Min

Datasheet: KT9121V , KT9124A , KT9124B , KT9126A , KT9127A , KT9127B , KT9129A , KT912A , S8550 , KT9131A , KT9133A , KT9135A-2 , KT9137A , KT9139A , KT9139B , KT913A , KT913B .

History: 2SC1115 | GES5818 | BU941ZT | PHPT60606NY | UN9214J | SSE202 | GES5179

Keywords - KT912B transistor datasheet

 KT912B cross reference
 KT912B equivalent finder
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