KTC393B9 Datasheet. Specs and Replacement

Type Designator: KTC393B9  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.02 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

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KTC393B9 datasheet

 8.1. Size:1271K  russia

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KTC393B9

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 9.1. Size:445K  kec

 ktc3911s.pdf pdf_icon

KTC393B9

SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E L B L High Voltage VCEO=120V. DIM MILLIMETERS Excellent hFE Linearity _ + 2.93 0.20 A B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 High hFE hFE=200 700. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 G 1.90 ... See More ⇒

 9.2. Size:354K  kec

 ktc3964.pdf pdf_icon

KTC393B9

SEMICONDUCTOR KTC3964 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. A Switching Applications B D C Solenoid Drive Applications E Temperature Compensated for Audio Amplifier Output Stage F FEATURES G High DC current gain hFE = 500(min) (IC=400mA) H Low Collector emitter saturation voltage VCE(sat)=0.5V(max) DIM MILLIMETERS J A 8.3 MAX (IC=300mA)... See More ⇒

 9.3. Size:929K  russia

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Detailed specifications: KTC3881, KTC3882, KTC3883, KTC3911, KTC3920, KTC393A-1, KTC393A9, KTC393B-1, BC549, KTC398A-5, KTC398B-5, KTC4075, KTC4076, KTC4077, KTC4079, KTC4080O, KTC4080R

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