KTD863 Datasheet. Specs and Replacement

Type Designator: KTD863

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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KTD863 datasheet

 ..1. Size:131K  utc

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KTD863

UNISONIC TECHNOLOGIES CO., LTD KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR DESCRIPTION The UTC KTD863 is a triple diffused NPN transistor. it uses UTC s advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current capability, etc. The UTC KTD863 is suitable for voltage regulator, ... See More ⇒

 ..2. Size:80K  kec

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KTD863

SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B D FEATURES High Voltage VCEO=60V(Min.). DIM MILLIMETERS P High Current IC(Max.)=1A. DEPTH 0.2 A 7.20 MAX High Transition Frequency fT=150MHz(Typ.). B 5.20 MAX C C 0.60 MAX S Wide Area of Safe Operation. D 2.50 MAX Q E 1.15 MAX K Complementar... See More ⇒

Detailed specifications: KTD2061, KTD2066, KTD2092, KTD2424, KTD3055, KTD525, KTD686, KTD718, A733, KTD998, KTN2222, KTN2222A, KTN2222AS, KTN2222S, KTN2369, KTN2369A, KTN2369S

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