KTD863 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD863
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
KTD863 Transistor Equivalent Substitute - Cross-Reference Search
KTD863 Datasheet (PDF)
ktd863.pdf
UNISONIC TECHNOLOGIES CO., LTD KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR DESCRIPTION The UTC KTD863 is a triple diffused NPN transistor. it uses UTCs advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current capability, etc. The UTC KTD863 is suitable for voltage regulator,
ktd863.pdf
SEMICONDUCTOR KTD863TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORVOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USEB DFEATURES High Voltage : VCEO=60V(Min.).DIM MILLIMETERSP High Current : IC(Max.)=1A.DEPTH:0.2A 7.20 MAX High Transition Frequency : fT=150MHz(Typ.). B 5.20 MAXCC 0.60 MAXS Wide Area of Safe Operation.D 2.50 MAXQE 1.15 MAXK Complementar
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD1858 | HEB834 | 2SD1869
