All Transistors. MA4102 Datasheet

 

MA4102 Datasheet and Replacement


   Type Designator: MA4102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO18
 

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MA4102 Datasheet (PDF)

 9.1. Size:222K  fairchild semi
 fdma410nz.pdf pdf_icon

MA4102

April 2009FDMA410NZSingle N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 Aoptimize the rDS(ON) @ VGS = 1.5 V on special M

 9.2. Size:332K  analog power
 ama410n.pdf pdf_icon

MA4102

Analog Power AMA410NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V4.7 Low thermal impedance 10099 @ VGS = 4.5V4.5 Fast switching speed DFN2X2 Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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