MA4102 Datasheet, Equivalent, Cross Reference Search
Type Designator: MA4102
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO18
MA4102 Transistor Equivalent Substitute - Cross-Reference Search
MA4102 Datasheet (PDF)
fdma410nz.pdf
April 2009FDMA410NZSingle N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 Aoptimize the rDS(ON) @ VGS = 1.5 V on special M
ama410n.pdf
Analog Power AMA410NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V4.7 Low thermal impedance 10099 @ VGS = 4.5V4.5 Fast switching speed DFN2X2 Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
