MA888 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MA888 Specs and Replacement

Type Designator: MA888

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO5

MA888 Substitution

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MA888 datasheet

0.1. Size:383K fairchild semi

fdma8884.pdf pdf_icon

May 2014 FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trenc... See More ⇒

Detailed specifications: MA8003, MA881, MA882, MA883, MA884, MA885, MA886, MA887, S8550, MA889, MA890, MA891, MA892, MA893, MA894, MA895, MA896