All Transistors. MA888 Datasheet

 

MA888 Datasheet and Replacement


   Type Designator: MA888
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO5
 

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MA888 Datasheet (PDF)

 0.1. Size:383K  fairchild semi
 fdma8884.pdf pdf_icon

MA888

May 2014FDMA8884Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trenc

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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