MC150 Specs and Replacement
Type Designator: MC150
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
MC150 Substitution
- BJT ⓘ Cross-Reference Search
MC150 datasheet
MPMC150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Typ... See More ⇒
Detailed specifications: MA901, MA902, MA909, MA910, MBTA42, MC140, MC141, MC142, A1013, MC151, MC152, MC160, MC161, MC172, MC328, MC350, MD1120
Keywords - MC150 pdf specs
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