2N1100 Specs and Replacement

Type Designator: 2N1100

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 65 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 95 °C

Electrical Characteristics

Transition Frequency (ft): 0.15 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO36

 2N1100 Substitution

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2N1100 datasheet

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2N1100

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Detailed specifications: 2N1094, 2N1095, 2N109-5, 2N1096, 2N1097, 2N1098, 2N1099, 2N110, BDT88, 2N1101, 2N1102, 2N1103, 2N1104, 2N1105, 2N1106, 2N1107, 2N1108

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