All Transistors. MJ10200 Datasheet

 

MJ10200 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ10200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 500 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4000 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SPECIAL

 MJ10200 Transistor Equivalent Substitute - Cross-Reference Search

   

MJ10200 Datasheet (PDF)

 9.1. Size:328K  fairchild semi
 fdmj1023pz.pdf

MJ10200 MJ10200

August 2007FDMJ1023PZtmDual P-Channel PowerTrench MOSFET 20V, 2.9A, 112mFeatures General Description Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9AThis dual P-Channel MOSFET uses Fairchilds advanced low voltage PowerTrench process. This device is designed Max rDS(on) = 160m at VGS = 2.5V, ID = 2.4Aspecifically as a single package solution for

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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