MJ10200 Specs and Replacement
Type Designator: MJ10200
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 500 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 4000 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SPECIAL
MJ10200 Substitution
- BJT ⓘ Cross-Reference Search
MJ10200 datasheet
August 2007 FDMJ1023PZ tm Dual P-Channel PowerTrench MOSFET 20V, 2.9A, 112m Features General Description Max rDS(on) = 112m at VGS = 4.5V, ID = 2.9A This dual P-Channel MOSFET uses Fairchild s advanced low voltage PowerTrench process. This device is designed Max rDS(on) = 160m at VGS = 2.5V, ID = 2.4A specifically as a single package solution for ... See More ⇒
Detailed specifications: MJ10050, MJ10051, MJ10052, MJ100BD45, MJ100BK100, MJ10100, MJ10101, MJ10102, MJE340, MJ10201, MJ10202, MJ105, MJ11011, MJ11012, MJ11013, MJ11014, MJ11015
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