MJ13070 Datasheet. Specs and Replacement

Type Designator: MJ13070  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 650 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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MJ13070 datasheet

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isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13070 CEO(SUS) = 450V(Min) MJ13071 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.... See More ⇒

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13070 = 450V(Min) MJ13071 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒

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Detailed specifications: MJ12005, MJ1201, MJ12010, MJ12020, MJ12021, MJ12022, MJ13014, MJ13015, 2SD669A, MJ13071, MJ13080, MJ13081, MJ13090, MJ13091, MJ13100, MJ13101, MJ13330

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