All Transistors. MJ425 Datasheet

 

MJ425 Datasheet and Replacement


   Type Designator: MJ425
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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MJ425 Datasheet (PDF)

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MJ425

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ425 DESCRIPTION High Collector-Emitter Voltage-VCEX= 700V DC Current Gain-hFE=10(min)@ IC=2.5A Low Collector-Emitter Saturation Voltage- VCE(sat)=0.8Vdc(max)@IC=1Adc APPLICATIONSDesigned for use in high voltage applications in deflection circuits, swithing regulators, inverters, and ti

Datasheet: MJ421S , MJ423 , MJ4237 , MJ4238 , MJ424 , MJ4240 , MJ4247 , MJ4248 , 13009 , MJ431 , MJ432 , MJ4360 , MJ4361 , MJ4380 , MJ4381 , MJ440 , MJ4401 .

Keywords - MJ425 transistor datasheet

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