All Transistors. MJE12007 Datasheet

 

MJE12007 Datasheet and Replacement


   Type Designator: MJE12007
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 750 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO220
 

 MJE12007 Substitution

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MJE12007 Datasheet (PDF)

 ..1. Size:118K  inchange semiconductor
 mje12007.pdf pdf_icon

MJE12007

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE12007 DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 B

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1825 | TP5401 | KSD5005 | KC856W | MJE5741 | NB211YJ | STTIP32C

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