MJE2360 PDF Specs and Replacement
Type Designator: MJE2360
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
MJE2360 Substitution
MJE2360 PDF detailed specifications
mje2360t.pdf
Order this document MOTOROLA by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS . . . useful for general purpose, high voltage applications requiring high fT. NPN SILICON Collector Emitter Sustaining Voltage 350 VOLTS VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc 30 WATTS DC Current Gain ... See More ⇒
mje2360t.pdf
isc Silicon NPN Power Transistor MJE2360T DESCRIPTION Collector Emitter Sustaining Voltage- V = 350 V(Min) CEO(SUS) DC Current Gain- h = 25(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 100mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier... See More ⇒
Detailed specifications: MJE224 , MJE225 , MJE230 , MJE231 , MJE232 , MJE233 , MJE234 , MJE235 , 13003 , MJE2360T , MJE2361 , MJE2361T , MJE2370 , MJE2371 , MJE240 , MJE241 , MJE242 .
History: KT8121A-1
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