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MJE2370 PDF Specs and Replacement


   Type Designator: MJE2370
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

 MJE2370 Substitution

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MJE2370 PDF detailed specifications

 9.1. Size:98K  motorola
 mje2360t.pdf pdf_icon

MJE2370

Order this document MOTOROLA by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS . . . useful for general purpose, high voltage applications requiring high fT. NPN SILICON Collector Emitter Sustaining Voltage 350 VOLTS VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc 30 WATTS DC Current Gain ... See More ⇒

 9.2. Size:215K  inchange semiconductor
 mje2360t.pdf pdf_icon

MJE2370

isc Silicon NPN Power Transistor MJE2360T DESCRIPTION Collector Emitter Sustaining Voltage- V = 350 V(Min) CEO(SUS) DC Current Gain- h = 25(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 100mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier... See More ⇒

Detailed specifications: MJE232 , MJE233 , MJE234 , MJE235 , MJE2360 , MJE2360T , MJE2361 , MJE2361T , BC327 , MJE2371 , MJE240 , MJE241 , MJE242 , MJE243 , MJE244 , MJE2480 , MJE2481 .

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