MJE2370 Datasheet. Specs and Replacement

Type Designator: MJE2370  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

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MJE2370 datasheet

 9.1. Size:98K  motorola

 mje2360t.pdf pdf_icon

MJE2370

Order this document MOTOROLA by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS . . . useful for general purpose, high voltage applications requiring high fT. NPN SILICON Collector Emitter Sustaining Voltage 350 VOLTS VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc 30 WATTS DC Current Gain ... See More ⇒

 9.2. Size:215K  inchange semiconductor

 mje2360t.pdf pdf_icon

MJE2370

isc Silicon NPN Power Transistor MJE2360T DESCRIPTION Collector Emitter Sustaining Voltage- V = 350 V(Min) CEO(SUS) DC Current Gain- h = 25(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 100mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier... See More ⇒

Detailed specifications: MJE232, MJE233, MJE234, MJE235, MJE2360, MJE2360T, MJE2361, MJE2361T, BC327, MJE2371, MJE240, MJE241, MJE242, MJE243, MJE244, MJE2480, MJE2481

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