All Transistors. MJE2370 Datasheet

 

MJE2370 Datasheet and Replacement


   Type Designator: MJE2370
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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MJE2370 Datasheet (PDF)

 9.1. Size:98K  motorola
 mje2360t.pdf pdf_icon

MJE2370

Order this documentMOTOROLAby MJE2360T/DSEMICONDUCTOR TECHNICAL DATAMJE2360TMJE2361TNPN Silicon High-VoltageTransistor0.5 AMPEREPOWER TRANSISTORS. . . useful for generalpurpose, high voltage applications requiring high fT.NPN SILICON CollectorEmitter Sustaining Voltage 350 VOLTSVCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc30 WATTS DC Current Gain

 9.2. Size:215K  inchange semiconductor
 mje2360t.pdf pdf_icon

MJE2370

isc Silicon NPN Power Transistor MJE2360TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 350 V(Min)CEO(SUS)DC Current Gain-: h = 25(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 100mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low power audio amplifier

Datasheet: MJE232 , MJE233 , MJE234 , MJE235 , MJE2360 , MJE2360T , MJE2361 , MJE2361T , BC327 , MJE2371 , MJE240 , MJE241 , MJE242 , MJE243 , MJE244 , MJE2480 , MJE2481 .

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