MJE253 Datasheet. Specs and Replacement
Type Designator: MJE253
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
MJE253 Substitution
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MJE253 datasheet
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter... See More ⇒
isc Silicon PNP Power Transistor MJE253 DESCRIPTION Collector Emitter Sustaining Voltage- V = CEO(SUS) -100 V(Min) DC Current Gain- h = 40(Min) @ I = -0.2 A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJE243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des... See More ⇒
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
Detailed specifications: MJE2491, MJE250, MJE251, MJE252, MJE2520, MJE2521, MJE2522, MJE2523, SS8050, MJE254, MJE270, MJE271, MJE2801, MJE2801K, MJE2801T, MJE29, MJE2901
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