MJE253 datasheet, аналоги, основные параметры

Наименование производителя: MJE253  📄📄 

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 40 MHz

Ёмкость коллекторного перехода (Cc): 70 pf

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: TO126

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MJE253 даташит

 ..1. Size:187K  onsemi
 mje243 mje253.pdf pdf_icon

MJE253

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

 ..2. Size:203K  cdil
 mje243 mje253.pdf pdf_icon

MJE253

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter

 ..3. Size:214K  inchange semiconductor
 mje253.pdf pdf_icon

MJE253

isc Silicon PNP Power Transistor MJE253 DESCRIPTION Collector Emitter Sustaining Voltage- V = CEO(SUS) -100 V(Min) DC Current Gain- h = 40(Min) @ I = -0.2 A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJE243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

 0.1. Size:183K  onsemi
 mje253g.pdf pdf_icon

MJE253

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE2491, MJE250, MJE251, MJE252, MJE2520, MJE2521, MJE2522, MJE2523, SS8050, MJE254, MJE270, MJE271, MJE2801, MJE2801K, MJE2801T, MJE29, MJE2901