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MJE253 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE253
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 70 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO126
 

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MJE253 PDF detailed specifications

 ..1. Size:187K  onsemi
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MJE253

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒

 ..2. Size:203K  cdil
mje243 mje253.pdf pdf_icon

MJE253

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter... See More ⇒

 ..3. Size:214K  inchange semiconductor
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MJE253

isc Silicon PNP Power Transistor MJE253 DESCRIPTION Collector Emitter Sustaining Voltage- V = CEO(SUS) -100 V(Min) DC Current Gain- h = 40(Min) @ I = -0.2 A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJE243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des... See More ⇒

 0.1. Size:183K  onsemi
mje253g.pdf pdf_icon

MJE253

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒

Otros transistores... MJE2491 , MJE250 , MJE251 , MJE252 , MJE2520 , MJE2521 , MJE2522 , MJE2523 , SS8050 , MJE254 , MJE270 , MJE271 , MJE2801 , MJE2801K , MJE2801T , MJE29 , MJE2901 .

 

 
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