MJF10012 Datasheet. Specs and Replacement
Type Designator: MJF10012 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO220F
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MJF10012 datasheet
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Detailed specifications: MJE802T, MJE803, MJE803T, MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, S9014, MJF122, MJF127, MJF13007, MJF15030, MJF15031, MJF16002, MJF16006A, MJF16010A
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BJT Parameters and How They Relate
History: PN5550 | MJE710 | 2SC5109 | MJE722 | 2SC5229 | PN4121 | MJE9780
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