2N433 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N433
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N433 Transistor Equivalent Substitute - Cross-Reference Search
2N433 Datasheet (PDF)
2n4338 2n4339 2n4340 2n4341.pdf
2N4338/4339/4340/4341Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)2N4338 -0.3 to -1 -50 0.6 0.62N4339 -0.6 to -1.8 -50 0.8 1.52N4340 -1 to -3 -50 1.3 3.62N4341 -2 to -6 -50 2 9FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: 2N4338
2n4338 2n4339 2n4340 2n4341.pdf
N-Channel JFETLow Noise AmplifierCORPORATION2N4338 2N4341FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet: 2N431 , 2N4310 , 2N4311 , 2N4312 , 2N4313 , 2N4314 , 2N4315 , 2N432 , TIP36C , 2N434 , 2N4346 , 2N4347 , 2N4348 , 2N4349 , 2N4350 , 2N4354 , 2N4355 .
