MJH10012 Datasheet and Replacement
Type Designator: MJH10012
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 118 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO218
MJH10012 Substitution
MJH10012 Datasheet (PDF)
mjh10012.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJH10012 DESCRIPTION With TO-3PN package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Em
Datasheet: MJF18006 , MJF18008 , MJF2955 , MJF3055 , MJF47 , MJF6107 , MJF6388 , MJF6688 , C3198 , MJH11017 , MJH11018 , MJH11019 , MJH11020 , MJH11021 , MJH11022 , MJH12004 , MJH13090 .
Keywords - MJH10012 transistor datasheet
MJH10012 cross reference
MJH10012 equivalent finder
MJH10012 lookup
MJH10012 substitution
MJH10012 replacement



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c3198 transistor | irfb3607pbf datasheet | 60n60 | 2n5485 equivalent | 2sa1941 | 2sc485 | 2sd287 | 2sd438