MJH10012 Specs and Replacement

Type Designator: MJH10012

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 118 W

Maximum Collector-Base Voltage |Vcb|: 550 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 350 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO218

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MJH10012 datasheet

 ..1. Size:136K  inchange semiconductor

 mjh10012.pdf pdf_icon

MJH10012

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJH10012 DESCRIPTION With TO-3PN package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Em... See More ⇒

Detailed specifications: MJF18006, MJF18008, MJF2955, MJF3055, MJF47, MJF6107, MJF6388, MJF6688, 9014, MJH11017, MJH11018, MJH11019, MJH11020, MJH11021, MJH11022, MJH12004, MJH13090

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