All Transistors. MJH10012 Datasheet

 

MJH10012 Datasheet and Replacement


   Type Designator: MJH10012
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 118 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO218
 

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MJH10012 Datasheet (PDF)

 ..1. Size:136K  inchange semiconductor
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MJH10012

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJH10012 DESCRIPTION With TO-3PN package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Em

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: PTB20105 | MT9002 | 2N3637UB

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