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MJH11019 Specs and Replacement


   Type Designator: MJH11019
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO218
 

 MJH11019 Substitution

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MJH11019 detailed specifications

 ..1. Size:212K  motorola
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf pdf_icon

MJH11019

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo... See More ⇒

 0.1. Size:141K  onsemi
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MJH11019

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

 7.1. Size:141K  onsemi
mjh11017g.pdf pdf_icon

MJH11019

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

 7.2. Size:222K  inchange semiconductor
mjh11017.pdf pdf_icon

MJH11019

isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -10A CE(sat) C = -4.0V(Max)@ I = -15A C Complement to Type MJH11018 Minimum Lot-to-Lot variations for robust device performance... See More ⇒

Detailed specifications: MJF3055 , MJF47 , MJF6107 , MJF6388 , MJF6688 , MJH10012 , MJH11017 , MJH11018 , 2SC945 , MJH11020 , MJH11021 , MJH11022 , MJH12004 , MJH13090 , MJH13091 , MJH16002 , MJH16002A .

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