MJH13090 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJH13090
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TOP3
MJH13090 Transistor Equivalent Substitute - Cross-Reference Search
MJH13090 Datasheet (PDF)
..1. Size:221K inchange semiconductor
mjh13090 mjh13091.pdf
mjh13090 mjh13091.pdf
isc Silicon NPN Power Transistors MJH13090/13091DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJH13090CEO(SUS)= 450V(Min)MJH13091High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
