MM1151 Specs and Replacement
Type Designator: MM1151
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO72
MM1151 Substitution
MM1151 datasheet
wmm115n15hg4.pdf
WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I = ... See More ⇒
Detailed specifications: MJW16012 , MJW16018 , MJW16110 , MJW16206 , MJW16210 , MJW16212 , MM1008 , MM1139 , MJE350 , MM1152 , MM1153 , MM1154 , MM1161 , MM1162 , MM1163 , MM1164 , MM1461 .
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