All Transistors. MM1151 Datasheet

 

MM1151 Datasheet and Replacement


   Type Designator: MM1151
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO72

 MM1151 Transistor Equivalent Substitute - Cross-Reference Search

   

MM1151 Datasheet (PDF)

 9.1. Size:709K  way-on
 wmm115n15hg4.pdf pdf_icon

MM1151

WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I = ... See More ⇒

Datasheet: MJW16012 , MJW16018 , MJW16110 , MJW16206 , MJW16210 , MJW16212 , MM1008 , MM1139 , MJE350 , MM1152 , MM1153 , MM1154 , MM1161 , MM1162 , MM1163 , MM1164 , MM1461 .

History: TP3709 | KRC419E | KRC686T | SUR550J | TP3866 | UN5217Q | NSDU95A

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