MM1152 Specs and Replacement

Type Designator: MM1152

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO72

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MM1152 datasheet

 9.1. Size:709K  way-on

 wmm115n15hg4.pdf pdf_icon

MM1152

WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I = ... See More ⇒

Detailed specifications: MJW16018, MJW16110, MJW16206, MJW16210, MJW16212, MM1008, MM1139, MM1151, D882P, MM1153, MM1154, MM1161, MM1162, MM1163, MM1164, MM1461, MM1462

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