All Transistors. MM1152 Datasheet

 

MM1152 Datasheet and Replacement


   Type Designator: MM1152
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO72
 

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MM1152 Datasheet (PDF)

 9.1. Size:709K  way-on
 wmm115n15hg4.pdf pdf_icon

MM1152

WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

Datasheet: MJW16018 , MJW16110 , MJW16206 , MJW16210 , MJW16212 , MM1008 , MM1139 , MM1151 , TIP36C , MM1153 , MM1154 , MM1161 , MM1162 , MM1163 , MM1164 , MM1461 , MM1462 .

History: 2SC870 | DDTC143ZE | SRA2204M | 2SC280H | 2SC2315 | KT645B | BD249F

Keywords - MM1152 transistor datasheet

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