MMBR920LT1 Datasheet. Specs and Replacement

Type Designator: MMBR920LT1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.268 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.035 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT23

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MMBR920LT1 datasheet

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MMBR920LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1, T3 High-Frequency Transistor . . . designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB ... See More ⇒

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MMBR920LT1

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 7.1. Size:54K  motorola

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MMBR920LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1 High-Frequency Transistor Designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f = ... See More ⇒

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Detailed specifications: MMBR521LT1, MMBR536, MMBR571LT1, MMBR901, MMBR901LT1, MMBR901LT3, MMBR911LT1, MMBR920, 13009, MMBR920LT3, MMBR931, MMBR931LT1, MMBR941, MMBR941BLT1, MMBR941BLT3, MMBR941LT1, MMBR941LT3

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