All Transistors. MMBR920LT1 Datasheet

 

MMBR920LT1 Datasheet and Replacement


   Type Designator: MMBR920LT1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.268 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.035 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4500 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT23
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MMBR920LT1 Datasheet (PDF)

 6.1. Size:54K  motorola
 mmbr920l.pdf pdf_icon

MMBR920LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1, T3High-Frequency Transistor. . . designed for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB

 6.2. Size:64K  njs
 mmbr920l.pdf pdf_icon

MMBR920LT1

 7.1. Size:54K  motorola
 mmbr920 .pdf pdf_icon

MMBR920LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =

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