MMBR920LT3 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBR920LT3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.268 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
MMBR920LT3 Transistor Equivalent Substitute - Cross-Reference Search
MMBR920LT3 Datasheet (PDF)
mmbr920l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1, T3High-Frequency Transistor. . . designed for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB
mmbr920 .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N790
