MMBTA20LT1 Datasheet. Specs and Replacement

Type Designator: MMBTA20LT1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

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MMBTA20LT1 datasheet

 ..1. Size:107K  onsemi

mmbta20lt1.pdf pdf_icon

MMBTA20LT1

MMBTA20LT1 General Purpose Amplifier NPN Silicon Features Pb-Free Package is Available http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 BASE Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 100 mAdc 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR-5... See More ⇒

 6.1. Size:413K  motorola

mmbta20l.pdf pdf_icon

MMBTA20LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA20LT1/D General Purpose Amplifier MMBTA20LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318 08, STYLE 6 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current Continuous IC 100 mAdc THERMAL C... See More ⇒

 8.1. Size:870K  fairchild semi

mmbta28.pdf pdf_icon

MMBTA20LT1

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle... See More ⇒

 8.2. Size:628K  fairchild semi

mpsa28 mmbta28 pzta28.pdf pdf_icon

MMBTA20LT1

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle... See More ⇒

Detailed specifications: MMBTA06, MMBTA06LT1, MMBTA12, MMBTA13, MMBTA13LT1, MMBTA14, MMBTA14LT1, MMBTA20, BC557, MMBTA28, MMBTA42, MMBTA42LT1, MMBTA43, MMBTA43LT1, MMBTA55, MMBTA55LT1, MMBTA56

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