All Transistors. MMBTA20LT1 Datasheet

 

MMBTA20LT1 Datasheet and Replacement


   Type Designator: MMBTA20LT1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23
 

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MMBTA20LT1 Datasheet (PDF)

 ..1. Size:107K  onsemi
mmbta20lt1.pdf pdf_icon

MMBTA20LT1

MMBTA20LT1General Purpose AmplifierNPN SiliconFeatures Pb-Free Package is Availablehttp://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1BASEEmitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 100 mAdc2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR-5

 6.1. Size:413K  motorola
mmbta20l.pdf pdf_icon

MMBTA20LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA20LT1/DGeneral Purpose AmplifierMMBTA20LT1NPN SiliconCOLLECTOR313BASE122EMITTERCASE 31808, STYLE 6MAXIMUM RATINGSSOT23 (TO236AB)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTHERMAL C

 8.1. Size:870K  fairchild semi
mmbta28.pdf pdf_icon

MMBTA20LT1

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

 8.2. Size:628K  fairchild semi
mpsa28 mmbta28 pzta28.pdf pdf_icon

MMBTA20LT1

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TIP54 | MMBT6517LT1G | 2SC4221 | MMBTA06LT1G | TIP30

Keywords - MMBTA20LT1 transistor datasheet

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