MMBTH81LT1 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH81LT1/DUHF/VHF TransistorMMBTH81LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 20 Vdc CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO

MPSH81 MMBTH81CEC TO-92BESOT-23BMark: 3DPNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 75.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage

DATA SHEETwww.onsemi.comPNP RF TransistorCOLLECTOR3MMBTH811This device is designed for general RF amplifier and mixerBASEapplications to 250 MHz with collector currents in the 1.0 mA to230 mA range. Sourced from Process 75.EMITTERFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant NSV Prefix for Automotive and Other Applicatio

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur