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MMBTH81LT1 Specs and Replacement


   Type Designator: MMBTH81LT1
   SMD Transistor Code: 3D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): O.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
 

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MMBTH81LT1 detailed specifications

 6.1. Size:73K  motorola
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MMBTH81LT1

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 7.1. Size:126K  motorola
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MMBTH81LT1

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 7.2. Size:721K  fairchild semi
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MMBTH81LT1

MPSH81 MMBTH81 C E C TO-92 B E SOT-23 B Mark 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage... See More ⇒

 7.3. Size:163K  onsemi
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MMBTH81LT1

DATA SHEET www.onsemi.com PNP RF Transistor COLLECTOR 3 MMBTH81 1 This device is designed for general RF amplifier and mixer BASE applications to 250 MHz with collector currents in the 1.0 mA to 2 30 mA range. Sourced from Process 75. EMITTER Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant NSV Prefix for Automotive and Other Applicatio... See More ⇒

Detailed specifications: MMBTA70LT1 , MMBTA92 , MMBTA92LT1 , MMBTA93 , MMBTA93LT1 , MMBTH10 , MMBTH24 , MMBTH81 , TIP35C , MMCM2221 , MMCM2222 , MMCM2369 , MMCM2484 , MMCM2857 , MMCM2906 , MMCM2907 , MMCM3903 .

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