MMBTH81LT1 Datasheet. Specs and Replacement

Type Designator: MMBTH81LT1  📄📄 

SMD Transistor Code: 3D

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): O.3 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

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MMBTH81LT1 datasheet

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MMBTH81LT1

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MMBTH81LT1

MPSH81 MMBTH81 C E C TO-92 B E SOT-23 B Mark 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage... See More ⇒

 7.3. Size:163K  onsemi

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MMBTH81LT1

DATA SHEET www.onsemi.com PNP RF Transistor COLLECTOR 3 MMBTH81 1 This device is designed for general RF amplifier and mixer BASE applications to 250 MHz with collector currents in the 1.0 mA to 2 30 mA range. Sourced from Process 75. EMITTER Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant NSV Prefix for Automotive and Other Applicatio... See More ⇒

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Detailed specifications: MMBTA70LT1, MMBTA92, MMBTA92LT1, MMBTA93, MMBTA93LT1, MMBTH10, MMBTH24, MMBTH81, TIP35C, MMCM2221, MMCM2222, MMCM2369, MMCM2484, MMCM2857, MMCM2906, MMCM2907, MMCM3903

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