MMBTH81LT1 Specs and Replacement
Type Designator: MMBTH81LT1
SMD Transistor Code: 3D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): O.3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
MMBTH81LT1 Substitution
MMBTH81LT1 detailed specifications
mpsh81 mmbth81.pdf
MPSH81 MMBTH81 C E C TO-92 B E SOT-23 B Mark 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage... See More ⇒
mmbth81.pdf
DATA SHEET www.onsemi.com PNP RF Transistor COLLECTOR 3 MMBTH81 1 This device is designed for general RF amplifier and mixer BASE applications to 250 MHz with collector currents in the 1.0 mA to 2 30 mA range. Sourced from Process 75. EMITTER Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant NSV Prefix for Automotive and Other Applicatio... See More ⇒
Detailed specifications: MMBTA70LT1 , MMBTA92 , MMBTA92LT1 , MMBTA93 , MMBTA93LT1 , MMBTH10 , MMBTH24 , MMBTH81 , TIP35C , MMCM2221 , MMCM2222 , MMCM2369 , MMCM2484 , MMCM2857 , MMCM2906 , MMCM2907 , MMCM3903 .
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