MP102 Specs and Replacement

Type Designator: MP102

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

 MP102 Substitution

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MP102 datasheet

 ..1. Size:965K  russia

 mp101-a-b mp102 mp103-a mp111-a-b mp112 mp113-a.pdf pdf_icon

MP102

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 0.1. Size:439K  diodes

 dmp1022ufdf.pdf pdf_icon

MP102

DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) max TA = +25 C PCB footprint of 4mm2 Low Gate Threshold Voltage 14.8m @ VGS = -4.5V -9.5A Fast Switching Speed 19m @ VGS = -2.5V -8.5A -12V ESD Protected Gate 26m @ VGS = -1.8V -7.2A To... See More ⇒

 0.2. Size:207K  diodes

 dmp1022ufde.pdf pdf_icon

MP102

DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = 25 C Low Gate Threshold Voltage Fast Switching Speed 16m @ VGS = -4.5V -9.1A ESD Protected to 3KV 21.5m @ VGS = -2.5V -7.9A Totally Lead-Free & Fully RoHS Comp... See More ⇒

Detailed specifications: MO810, MO816, MO818, MO870, MP10, MP101, MP101A, MP101B, 2SD2499, MP103, MP103A, MP104, MP1077, MP10A, MP10B, MP11, MP110

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