2N4429 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4429
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.425 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
2N4429 Transistor Equivalent Substitute - Cross-Reference Search
2N4429 Datasheet (PDF)
2n4429.pdf
2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for A 45Class C Amplifier Applications Up to 1,000 MHz. B FEATURES: C D PG = 7.5 dB Typ. at 1.0 W/1000 MHz JE I Emitter Ballasting for Ruggedness F Omnigold Metallization System GH#8-32 UNCKMAXIMUM RATINGS MINIMUM MAXIMUMDIMin
2n3866 2n4427.pdf
DISCRETE SEMICONDUCTORSDATA SHEET2N3866; 2N4427Silicon planar epitaxialoverlay transistors1995 Oct 27Product specificationSupersedes data of August 1986File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3866; 2N4427overlay transistorsDESCRIPTION APPLICATIONSNPN overlay transistors in TO-39 metal packages wi
2n4427.pdf
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2n4424.pdf
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2n4428.pdf
2N4428NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2N4428 is a High FrequencyTransistor Designed for Amplifier andOscillator Applications.MAXIMUM RATINGS IC 425 mAVCE 30 VPDISS 3.5 W @ TC = 25 OC TJ -65 OC to +200 OCTSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE3 = COLLECTOR50 OC/WJCNONECHARACTERISTICS TC = 25 OCSYMBOL TE
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
