2N4429 Specs and Replacement
Type Designator: 2N4429
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.425 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO128
2N4429 Substitution
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2N4429 datasheet
2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for A 45 Class C Amplifier Applications Up to 1,000 MHz. B FEATURES C D PG = 7.5 dB Typ. at 1.0 W/1000 MHz J E I Emitter Ballasting for Ruggedness F Omnigold Metallization System G H #8-32 UNC K MAXIMUM RATINGS MINIMUM MAXIMUM DIM in... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages wi... See More ⇒
Detailed specifications: 2N4421, 2N4422, 2N4423, 2N4424, 2N4425, 2N4426, 2N4427, 2N4428, 9014, 2N443, 2N4430, 2N4431, 2N4432, 2N4432A, 2N4433, 2N4434, 2N4435
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