1601 Datasheet. Specs and Replacement
Type Designator: 1601 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
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1601 datasheet
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JMnic Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emi... See More ⇒
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B1M160120HC SiC MOSFET V 1200 V DS I (Tc=25 C) 20 A D R 160 m DS(on) Features Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement... See More ⇒
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isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -7.5A CE(sat) C Large Current Capability-I = -15A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ide... See More ⇒
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isc Silicon NPN Power Transistor MJW16010 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critica... See More ⇒
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isc Silicon NPN Power Transistor MJ16018 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
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isc Silicon NPN Power Transistor MJ16012 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate... See More ⇒
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isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA... See More ⇒
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isc Silicon NPN Power Transistor MJ16016 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
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mj16014.pdf
isc Silicon NPN Power Transistor MJ16014 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒
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mjw16010a.pdf
isc Silicon NPN Power Transistor MJW16010A DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critic... See More ⇒
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2sk1601.pdf
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mjw16018.pdf
isc Silicon NPN Power Transistor MJW16018 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin... See More ⇒
0.38. Size:219K inchange semiconductor
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isc Silicon NPN Power Transistor MJH16018 DESCRIPTION Collector-Emitter Voltage- V = 800V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particu- larly suited for line operated swi... See More ⇒
Detailed specifications: 1402, 142T2, 1501, 1502, 152NU70, 153NU70, 154NU70, 155NU70, MJE340, 1602, 16029, 16039, 16207, 16207B, 16298, 16299, 16300
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