1601 PDF and Equivalents Search

Order this document MOTOROLA by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA MJW16010A * Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1 kV SWITCHMODE Series 15 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 125 AND 175 WATTS inductive circuits where fall time is critical. The... See More ⇒

Order this document MOTOROLA by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series MJ16012* NPN Silicon Power Transistors These transistors are designed for high voltage, high speed, power switching in MJW16012* inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications... See More ⇒

Order this document MOTOROLA by MJ16018/D SEMICONDUCTOR TECHNICAL DATA * MJ16018 * MJW16018 Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1.5 kV SWITCHMODE Series 10 AMPERES These transistors are designed for high voltage, high speed, power switching in 800 VOLTS inductive circuits where fall time is critical. They are par... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET PLB16012U NPN microwave power transistor 1997 Feb 18 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA Microwave performance up to Tmb =25 C in a common base class C Input matching cell allows an easier narrowband amplifier... See More ⇒

RN1601 RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

... See More ⇒

... See More ⇒

... See More ⇒

... See More ⇒

... See More ⇒

Technical Information ModSTACK 6MS1600R17KE3-3WCH-C21VTIN Vorl ufige Daten preliminary data Key data 3x 975A rms at 789V rms, water cooled General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and sensors included. These are only technical data! Please read carefully the complete documentation and maintain the proper design en... See More ⇒

/ Technical Information IGBT- FF800R17KE3_B2 IGBT-modules IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25 C V 1700 V vj CES Collector-emitter voltage DC T = 80 C, T = 150 C I 800 A C vj max C nom... See More ⇒

/ Technical Information IGBT- FF800R17KE3_B2 IGBT-modules IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25 C V 1700 V vj CES Collector-emitter voltage T = 80 C, T = 150 C I 800 A C vj max C nom Continuous DC collector current T = 25 C, T = 150 C... See More ⇒

DATA SHEET www.onsemi.com Bipolar Transistor -160 V, -1.5 A, Low VCE(sat) PNP Single LFPAK LFPAK8 3.3x3.3, 0.65P CASE 760AD NST1601CL ELECTRICAL CONNECTION This device is bipolar junction transistor featuring high current, low C 5, 6, 7, 8 saturation voltage, and high speed switching. Suitable for automotive applications. AEC-Q101 qualified and PPAP capable. (NSVT1601CLTWG) Featur... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). FC591601 Silicon N-channel MOS FET For switching circuits Overview Package FC591601 is N-channel dual type small signal MOS FET employed small size Code surface mounting package. SSMini5-F4-B Package dimension clicks here. Click! Features Low drain-source ON resistance RDS(on) typ. = 6 W (VGS = 4.... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). FC551601 Silicon N-channel MOS FET For switching circuits Overview Package FC551601 is N-channel dual type small signal MOS FET employed small size Code surface mounting package. SMini5-F3-B Pin Name Features 1 Gate (FET1) 4 Drain (FET2) 2 Source (FET1/2) 5 Drain (FET1) Low drain-source ON... See More ⇒

VDS 1200 V ID(MAX) @ 25 C 17.7 A C2M0160120D RDS(on) 160 m Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher Syst... See More ⇒

... See More ⇒

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ16018 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emi... See More ⇒

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute... See More ⇒

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1601 Case ITO-220 Unit mm (TP15T4) -15A PNP RATINGS ... See More ⇒

GOFORD G1601 DESCRIPTION D The G1601 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @ (Typ) @-2.5V -4.5V -20V 55m 70m -2.6 A G1601 ... See More ⇒

B1M160120HC SiC MOSFET V 1200 V DS I (Tc=25 C) 20 A D R 160 m DS(on) Features Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement... See More ⇒

isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -7.5A CE(sat) C Large Current Capability-I = -15A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ide... See More ⇒

isc Silicon NPN Power Transistor MJW16010 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critica... See More ⇒

isc Silicon NPN Power Transistor MJ16018 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

isc Silicon NPN Power Transistor MJ16012 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA... See More ⇒

isc Silicon NPN Power Transistor MJ16010 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate... See More ⇒

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VA... See More ⇒

isc Silicon NPN Power Transistor MJ16016 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

isc Silicon NPN Power Transistor MJ16014 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒

isc Silicon NPN Power Transistor MJW16010A DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critic... See More ⇒

isc N-Channel MOSFET Transistor 2SK1601 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX... See More ⇒

isc Silicon NPN Power Transistor MJW16018 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin... See More ⇒

isc Silicon NPN Power Transistor MJH16018 DESCRIPTION Collector-Emitter Voltage- V = 800V(Min) CEO(SUS) Fast Turn-Off Time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particu- larly suited for line operated swi... See More ⇒