2N457 Specs and Replacement
Type Designator: 2N457
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
2N457 Substitution
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2N457 datasheet
isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2N450, 2N451, 2N452, 2N453, 2N454, 2N456, 2N456A, 2N456B, BD333, 2N4576, 2N457A, 2N457B, 2N458, 2N458A, 2N458B, 2N459, 2N459A
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History: KT3102VM | KT3102K | KT3102JM | 2SD1578
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