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2N457A Specs and Replacement


   Type Designator: 2N457A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

 2N457A Substitution

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2N457A detailed specifications

 9.1. Size:317K  rca
 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf pdf_icon

2N457A

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 9.2. Size:182K  inchange semiconductor
 2n4576.pdf pdf_icon

2N457A

isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: 2N452 , 2N453 , 2N454 , 2N456 , 2N456A , 2N456B , 2N457 , 2N4576 , BD222 , 2N457B , 2N458 , 2N458A , 2N458B , 2N459 , 2N459A , 2N45A , 2N46 .

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