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2N457B Specs and Replacement


   Type Designator: 2N457B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 30 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

 2N457B Substitution

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2N457B detailed specifications

 9.2. Size:182K  inchange semiconductor
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2N457B

isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: 2N453 , 2N454 , 2N456 , 2N456A , 2N456B , 2N457 , 2N4576 , 2N457A , BC547 , 2N458 , 2N458A , 2N458B , 2N459 , 2N459A , 2N45A , 2N46 , 2N460 .

Keywords - 2N457B transistor specs

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