2N457B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N457B
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2N457B Transistor Equivalent Substitute - Cross-Reference Search
2N457B Datasheet (PDF)
9.2. Size:182K inchange semiconductor
2n4576.pdf
2n4576.pdf
isc Silicon NPN Power Transistor 2N4576DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2N453 , 2N454 , 2N456 , 2N456A , 2N456B , 2N457 , 2N4576 , 2N457A , TIP41C , 2N458 , 2N458A , 2N458B , 2N459 , 2N459A , 2N45A , 2N46 , 2N460 .
