2N457B Datasheet. Specs and Replacement

Type Designator: 2N457B  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 30 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

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2N457B datasheet

 9.1. Size:317K  rca

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2N457B

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 9.2. Size:182K  inchange semiconductor

 2n4576.pdf pdf_icon

2N457B

isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: 2N453, 2N454, 2N456, 2N456A, 2N456B, 2N457, 2N4576, 2N457A, BC547, 2N458, 2N458A, 2N458B, 2N459, 2N459A, 2N45A, 2N46, 2N460

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