2N1119 Specs and Replacement
Type Designator: 2N1119
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Package: TO5
2N1119 Substitution
- BJT ⓘ Cross-Reference Search
2N1119 datasheet
August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack... See More ⇒
Detailed specifications: 2N1111B, 2N1114, 2N1115, 2N1115A, 2N1116, 2N1117, 2N1118, 2N1118A, BD140, 2N111A, 2N112, 2N1120, 2N1121, 2N1122, 2N1122A, 2N1123, 2N1124
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