2N111A Specs and Replacement
Type Designator: 2N111A
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.13 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO22
2N111A Substitution
- BJT ⓘ Cross-Reference Search
2N111A datasheet
August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack... See More ⇒
Detailed specifications: 2N1114 , 2N1115 , 2N1115A , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , TIP3055 , 2N112 , 2N1120 , 2N1121 , 2N1122 , 2N1122A , 2N1123 , 2N1124 , 2N1125 .
History: 15C01C | 2N109 | 2N1273BL | 2N1128 | 2N101-13 | 2N1273V | 2N1046A
Keywords - 2N111A pdf specs
2N111A cross reference
2N111A equivalent finder
2N111A pdf lookup
2N111A substitution
2N111A replacement
