MPSD55 Datasheet. Specs and Replacement
Type Designator: MPSD55 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO92
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MPSD55 datasheet
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Detailed specifications: MPSD01, MPSD02, MPSD03, MPSD04, MPSD05, MPSD51, MPSD52, MPSD54, BD786, MPSD56, MPSDO6, MPSH02, MPSH04, MPSH05, MPSH07, MPSH08, MPSH10
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BJT Parameters and How They Relate
History: 2SA1832
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