MPSH11 Specs and Replacement

Type Designator: MPSH11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

 MPSH11 Substitution

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MPSH11 datasheet

 ..1. Size:78K  motorola

mpsh10 mpsh11.pdf pdf_icon

MPSH11

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH10/D VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vd... See More ⇒

 ..2. Size:123K  fairchild semi

mpsh11 mmbth11.pdf pdf_icon

MPSH11

MPSH11 MMBTH11 C E TO-92 C E B B SOT-23 Mark 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common- base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings... See More ⇒

 9.1. Size:76K  motorola

mpsh17re.pdf pdf_icon

MPSH11

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH17/D CATV Transistor NPN Silicon MPSH17 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 15 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 20 Vdc Emitter Base Voltage VEBO 3.0 Vdc Total Devi... See More ⇒

 9.2. Size:738K  fairchild semi

mmbth10 mpsh10.pdf pdf_icon

MPSH11

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S... See More ⇒

Detailed specifications: MPSD56, MPSDO6, MPSH02, MPSH04, MPSH05, MPSH07, MPSH08, MPSH10, 2N2907, MPSH17, MPSH19, MPSH20, MPSH24, MPSH30, MPSH31, MPSH32, MPSH33

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