MPSH11 Todos los transistores

 

MPSH11 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSH11
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 650 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO92
 

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MPSH11 datasheet

 ..1. Size:78K  motorola
mpsh10 mpsh11.pdf pdf_icon

MPSH11

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH10/D VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vd

 ..2. Size:123K  fairchild semi
mpsh11 mmbth11.pdf pdf_icon

MPSH11

MPSH11 MMBTH11 C E TO-92 C E B B SOT-23 Mark 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common- base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings

 9.1. Size:76K  motorola
mpsh17re.pdf pdf_icon

MPSH11

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH17/D CATV Transistor NPN Silicon MPSH17 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 15 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 20 Vdc Emitter Base Voltage VEBO 3.0 Vdc Total Devi

 9.2. Size:738K  fairchild semi
mmbth10 mpsh10.pdf pdf_icon

MPSH11

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

Otros transistores... MPSD56 , MPSDO6 , MPSH02 , MPSH04 , MPSH05 , MPSH07 , MPSH08 , MPSH10 , 2N2907 , MPSH17 , MPSH19 , MPSH20 , MPSH24 , MPSH30 , MPSH31 , MPSH32 , MPSH33 .

 

 

 


 
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