MPSH30 Specs and Replacement

Type Designator: MPSH30

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 0.65 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

 MPSH30 Substitution

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MPSH30 datasheet

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MPSH30

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MPSH30

MPSH34 NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. TO-92 Sourced from process 47. 1 See MPSH11 for characteristics. 1. Bas... See More ⇒

Detailed specifications: MPSH07, MPSH08, MPSH10, MPSH11, MPSH17, MPSH19, MPSH20, MPSH24, TIP32C, MPSH31, MPSH32, MPSH33, MPSH34, MPSH37, MPSH54, MPSH55, MPSH81

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