All Transistors. MPSH30 Datasheet

 

MPSH30 Datasheet and Replacement


   Type Designator: MPSH30
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 0.65 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92
 

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MPSH30 Datasheet (PDF)

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MPSH30

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MPSH30

MPSH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.TO-92 Sourced from process 47.1 See MPSH11 for characteristics.1. Bas

Datasheet: MPSH07 , MPSH08 , MPSH10 , MPSH11 , MPSH17 , MPSH19 , MPSH20 , MPSH24 , 2SC1740 , MPSH31 , MPSH32 , MPSH33 , MPSH34 , MPSH37 , MPSH54 , MPSH55 , MPSH81 .

History: SBC856BDW1T1G | MQ5172 | DTA114YSA

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