MPSH81 Specs and Replacement
Type Designator: MPSH81
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.85 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
MPSH81 Substitution
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MPSH81 datasheet
MPSH81 MMBTH81 C E C TO-92 B E SOT-23 B Mark 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: MPSH30 , MPSH31 , MPSH32 , MPSH33 , MPSH34 , MPSH37 , MPSH54 , MPSH55 , BD333 , MPSH83 , MPSH85 , MPSL01 , MPSL01A , MPSL01B , MPSL07 , MPSL08 , MPSL51 .
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