All Transistors. MPSH81 Datasheet

 

MPSH81 Datasheet and Replacement


   Type Designator: MPSH81
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 0.85 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
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MPSH81 Datasheet (PDF)

 ..1. Size:721K  fairchild semi
 mpsh81 mmbth81.pdf pdf_icon

MPSH81

MPSH81 MMBTH81CEC TO-92BESOT-23BMark: 3DPNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 75.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage

 ..2. Size:598K  onsemi
 mmbth81 mpsh81.pdf pdf_icon

MPSH81

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:111K  motorola
 mpsh83.pdf pdf_icon

MPSH81

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DMC364A6 | AC166 | KSD5741 | 2SD2136 | MM3725 | 2SC5489 | MMBR521LT1

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