MPSW63 Specs and Replacement

Type Designator: MPSW63

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO92

 MPSW63 Substitution

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MPSW63 datasheet

 ..1. Size:153K  motorola

mpsw63 mpsw64.pdf pdf_icon

MPSW63

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW63/D One Watt Darlington Transistors MPSW63 PNP Silicon * MPSW64 COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS 1 2 3 MPSW63 Rating Symbol MPSW64 Unit Collector Emitter Voltage VCES 30 Vdc CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO 30 Vdc Emitte... See More ⇒

 ..2. Size:100K  onsemi

mpsw63 mpsw64.pdf pdf_icon

MPSW63

ON Semiconductort MPSW63 One Watt Darlington MPSW64* Transistors *ON Semiconductor Preferred Device PNP Silicon w These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.... See More ⇒

 9.1. Size:1370K  cn marching-power

mpsa60m160 mpsp60m160 mpsh60m160 mpsc60m160 mpsw60m160.pdf pdf_icon

MPSW63

MPSA60M160,MPSP60M160,MPSC60M160, MPSH60M160,MPSW60M160 FEATURES APPLICATIONS BVDSS=600V, ID=20A Switch Mode Power Supply (SMPS) RDS(on) 0.16 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-263 TO-247 TO-220 TO-262 TO-220F Device Marking and Package Informati... See More ⇒

 9.2. Size:1042K  cn marching-power

mpsw65m045b.pdf pdf_icon

MPSW63

MPSW65M045B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D =65A RDS(on) @ 0.045 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD Diode S TO-247 Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp... See More ⇒

Detailed specifications: MPSW45, MPSW45A, MPSW51, MPSW51A, MPSW55, MPSW56, MPSW57, MPSW60, 2SA1837, MPSW64, MPSW92, MPSW93, MQ1613, MQ1613A, MQ1613R, MQ1711, MQ1893

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