MPSW63 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSW63
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 125
MHz
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de MPSW63
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Selección ⓘ de transistores por parámetros
MPSW63 datasheet
..1. Size:153K motorola
mpsw63 mpsw64.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW63/D One Watt Darlington Transistors MPSW63 PNP Silicon * MPSW64 COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS 1 2 3 MPSW63 Rating Symbol MPSW64 Unit Collector Emitter Voltage VCES 30 Vdc CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO 30 Vdc Emitte
..2. Size:100K onsemi
mpsw63 mpsw64.pdf 

ON Semiconductort MPSW63 One Watt Darlington MPSW64* Transistors *ON Semiconductor Preferred Device PNP Silicon w These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
9.1. Size:1370K cn marching-power
mpsa60m160 mpsp60m160 mpsh60m160 mpsc60m160 mpsw60m160.pdf 

MPSA60M160,MPSP60M160,MPSC60M160, MPSH60M160,MPSW60M160 FEATURES APPLICATIONS BVDSS=600V, ID=20A Switch Mode Power Supply (SMPS) RDS(on) 0.16 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-263 TO-247 TO-220 TO-262 TO-220F Device Marking and Package Informati
9.2. Size:1042K cn marching-power
mpsw65m045b.pdf 

MPSW65M045B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D =65A RDS(on) @ 0.045 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD Diode S TO-247 Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp
9.3. Size:4748K cn marching-power
mpsw65m065.pdf 

MPSW65M065 650V Super-Junction Power MOSFET FEATURES BV DSS=650 V, I D=55A RDS(on) @ 65m (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking
9.4. Size:1658K cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf 

MPSA65M170,MPSP65M170,MPSC65M170, MPSH65M170,MPSW65M170,MPSY65M170 FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS) RDS(on) 0.17 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant D S S Pin1 G G Pin2 Driver Source TO-247 TO-220F TO-2
9.5. Size:3986K cn marching-power
mpsw65m046cfd.pdf 

MPSW65M046CFD 650V Super-Junction Power MOSFET Junction Power MOSFET FEATURES BV DSS=650 V, I D=62A RDS(on) @ 0.046 (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Pow
9.6. Size:1225K cn marching-power
mpsw60m150b.pdf 

MPSW60M150B 600V N-Channel Super Junction MOSFET Features BV DSS=600V, I D=21.4A RDS(on) @ 0.15 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-247 Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U
9.7. Size:1008K cn marching-power
mpsa60m082 mpsw60m082.pdf 

MPSA60M082,MPSW60M082 FEATURES APPLICATIONS BVDSS=600V, ID=47A Switch Mode Power Supply (SMPS) RDS(on) 0.082 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-247 TO-220F Device Marking and Package Information Ordering code Package Marking MPSA60M082 TO-220F MP
9.8. Size:2237K cn marching-power
mpsw60m043cfd.pdf 

MPSW60M043CFD 600V Super-Junction Power MOSFET FEATURES BV DSS=600 V, I D=66 A RDS(on) @ 0.043 (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (
9.9. Size:1521K cn marching-power
mpsw65m092cfd.pdf 

MPSW65M092CFD 650V Super-Junction Power MOSFET FEATURES BV DSS=650 V, I D=41A RDS(on) @ 0.092 (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P
9.10. Size:1545K cn marching-power
mpsw60m086cfd.pdf 

MPSW60M086CFD 600V Super-Junction Power MOSFET FEATURES BV DSS=600 V, I D=43A RDS(on) @ 0.086 (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P
Otros transistores... MPSW45
, MPSW45A
, MPSW51
, MPSW51A
, MPSW55
, MPSW56
, MPSW57
, MPSW60
, 2SA1837
, MPSW64
, MPSW92
, MPSW93
, MQ1613
, MQ1613A
, MQ1613R
, MQ1711
, MQ1893
.
History: DW6089