MPSW63 Todos los transistores

 

MPSW63 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSW63
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: TO92
 

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MPSW63 datasheet

 ..1. Size:153K  motorola
mpsw63 mpsw64.pdf pdf_icon

MPSW63

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW63/D One Watt Darlington Transistors MPSW63 PNP Silicon * MPSW64 COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS 1 2 3 MPSW63 Rating Symbol MPSW64 Unit Collector Emitter Voltage VCES 30 Vdc CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO 30 Vdc Emitte

 ..2. Size:100K  onsemi
mpsw63 mpsw64.pdf pdf_icon

MPSW63

ON Semiconductort MPSW63 One Watt Darlington MPSW64* Transistors *ON Semiconductor Preferred Device PNP Silicon w These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

 9.1. Size:1370K  cn marching-power
mpsa60m160 mpsp60m160 mpsh60m160 mpsc60m160 mpsw60m160.pdf pdf_icon

MPSW63

MPSA60M160,MPSP60M160,MPSC60M160, MPSH60M160,MPSW60M160 FEATURES APPLICATIONS BVDSS=600V, ID=20A Switch Mode Power Supply (SMPS) RDS(on) 0.16 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-263 TO-247 TO-220 TO-262 TO-220F Device Marking and Package Informati

 9.2. Size:1042K  cn marching-power
mpsw65m045b.pdf pdf_icon

MPSW63

MPSW65M045B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D =65A RDS(on) @ 0.045 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD Diode S TO-247 Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp

Otros transistores... MPSW45 , MPSW45A , MPSW51 , MPSW51A , MPSW55 , MPSW56 , MPSW57 , MPSW60 , 2SA1837 , MPSW64 , MPSW92 , MPSW93 , MQ1613 , MQ1613A , MQ1613R , MQ1711 , MQ1893 .

History: DW6089

 

 

 


 
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