Биполярный транзистор MPSW63 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MPSW63
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 125 MHz
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: TO92
MPSW63 Datasheet (PDF)
mpsw63 mpsw64.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW63/DOne Watt Darlington TransistorsMPSW63PNP Silicon*MPSW64COLLECTOR 3*Motorola Preferred DeviceBASE2EMITTER 1MAXIMUM RATINGS123MPSW63Rating Symbol MPSW64 UnitCollectorEmitter Voltage VCES 30 VdcCASE 2905, STYLE 1TO92 (TO226AE)CollectorBase Voltage VCBO 30 VdcEmitte
mpsw63 mpsw64.pdf
ON SemiconductortMPSW63One Watt DarlingtonMPSW64*Transistors*ON Semiconductor Preferred DevicePNP Siliconw These devices are available in Pb-free package(s). Specifications hereinapply to both standard and Pb-free devices. Please see our website atwww.onsemi.com for specific Pb-free orderable part numbers, orcontact your local ON Semiconductor sales office or representative.
mpsa60m160 mpsp60m160 mpsh60m160 mpsc60m160 mpsw60m160.pdf
MPSA60M160,MPSP60M160,MPSC60M160,MPSH60M160,MPSW60M160FEATURES APPLICATIONS BVDSS=600V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.16(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-263 TO-247TO-220 TO-262TO-220FDevice Marking and Package Informati
mpsw65m045b.pdf
MPSW65M045B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, ID =65ARDS(on) @ : 0.045 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD DiodeS TO-247Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp
mpsw65m065.pdf
MPSW65M065650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=55ARDS(on) @ :65m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf
MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2
mpsw65m046cfd.pdf
MPSW65M046CFD650V Super-Junction Power MOSFETJunction Power MOSFETFEATURESBVDSS=650 V, ID=62ARDS(on) @ :0.046 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Pow
mpsw60m150b.pdf
MPSW60M150B600V N-Channel Super Junction MOSFETFeaturesBVDSS=600V, ID=21.4ARDS(on) @ :0.15 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDSTO-247Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U
mpsa60m082 mpsw60m082.pdf
MPSA60M082,MPSW60M082FEATURES APPLICATIONS BVDSS=600V, ID=47A Switch Mode Power Supply (SMPS)RDS(on):0.082(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-247TO-220FDevice Marking and Package InformationOrdering code Package MarkingMPSA60M082 TO-220F MP
mpsw60m043cfd.pdf
MPSW60M043CFD600V Super-Junction Power MOSFETFEATURESBVDSS=600 V, ID=66 ARDS(on) @ :0.043 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (
mpsw65m092cfd.pdf
MPSW65M092CFD650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=41ARDS(on) @ :0.092 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P
mpsw60m086cfd.pdf
MPSW60M086CFD600V Super-Junction Power MOSFETFEATURESBVDSS=600 V, ID=43ARDS(on) @ :0.086 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050