MPSW93 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPSW93
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
MPSW93 Transistor Equivalent Substitute - Cross-Reference Search
MPSW93 Datasheet (PDF)
mpsw92re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW92/DOne Watt High Voltage TransistorMPSW92PNP SiliconMotorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2905, STYLE 1TO92 (TO226AE)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 300 VdcCollectorBase Voltage VCBO 300 VdcEmitterBase Voltage
mpsw92.pdf
MPSW92One Watt High VoltageTransistorPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector-Emitter Voltage VCEO -300 VdcCollector-Base Voltage VCBO -300 Vdc1Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcTotal Device Dissipation @ TA = 25C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
