All Transistors. MRF231 Datasheet

 

MRF231 Datasheet and Replacement


   Type Designator: MRF231
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 25 pF
   Noise Figure, dB: -
   Package: X28
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MRF231 Datasheet (PDF)

 9.1. Size:241K  hgsemi
 mrf235.pdf pdf_icon

MRF231

HG RF POWER TRANSISTORMRF235SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNPN Silicon RF power transistor MRF235Description: MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features: Specified 12.5V, 90MHz characteristics Output Powe

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA1998 | UN421D | BCP54-16HE3 | BDX61 | 2SC527 | 3N69 | 2SB450A

Keywords - MRF231 transistor datasheet

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