MRF231 Datasheet. Specs and Replacement

Type Designator: MRF231

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 25 pF

Noise Figure, dB: -

Package: X28

 MRF231 Substitution

- BJT ⓘ Cross-Reference Search

 

MRF231 datasheet

 9.1. Size:241K  hgsemi

 mrf235.pdf pdf_icon

MRF231

HG RF POWER TRANSISTOR MRF235 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR NPN Silicon RF power transistor MRF235 Description MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features Specified 12.5V, 90MHz characteristics Output Powe... See More ⇒

Detailed specifications: MRF222, MRF223, MRF224, MRF225, MRF226, MRF227, MRF229, MRF230, 2N2907, MRF232, MRF233, MRF234, MRF237, MRF238, MRF243, MRF244, MRF245

Keywords - MRF231 pdf specs

 MRF231 cross reference

 MRF231 equivalent finder

 MRF231 pdf lookup

 MRF231 substitution

 MRF231 replacement